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Semiconductor Day

comparative research

Robust, reproducible MIS first to enable expected comparative research. The capacitor device must be installed. To both manufacturing technology and device layout, the considerations chosen here may have a significant impact on the operation of the device. Briefly describe the system. Vertical organic MIS capacitors in principle. It was built on two dientos. In floor gate units, semiconductor materials are the insulator is injected with sedimentary charges above. The upper gate unit injects the charge carrier from the underside in the opposite direction. be here. The system presented is the result of the optimization process of the process. Layout of the Dianto MIS capacitor (genetic layer stack) Semiconductor process parameters). In comparison to OFET, the MIS capacitor is a very large
After initial setup induced by the interaction of semiconductors and insulating materials. Experiments using SiSiO_2 substrate selected Parylene C as the insulation material. Parylene-C has a lower leakage resistance than is commonly used.

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