Manufacture of samples (for spectrometry, etc.) and devices (MIS capacitors, OFETs) It always begins with the preparation of each substrate. The board of appeal Cutting glass or silicon wafer to appropriate size and preparing manually. Alternatively, use the pre-cutting board as it is. Afterwards, clean the board as follows that Ultrasonic treatment for at least 10 minutes in acetone and isopropanol before drying Unless otherwise noted, all other device preparation steps are as follows - The oxygen concentration is the next nitrogenized glovebox. Five minutes and three minutes each. The measurement value of the process management lm thickness is by default, it is run using the Brewer Dektak XT tactile surface urorometa. The device is manufactured from an architecture. This information is - as per each chapter, this is a brief description of the general procedure. Semiconductor Deposition : Semiconductor. Unless specified separately for varying concentrations to change the thickness and shape of semiconductors, the semiconductor concentration is the next toluene solution. 10 mg ml-1 improves the Lm form, which has been spun at 1000 rpm for 50 seconds, and the remaining solvent was annealed at 60℃ for 5 minutes.