PN bonding forms the basis for many electronic and photonick devices, including - It can be used as a transistor, LED, solar cell, laser, photo diode. formed by joining p-type (doping at high hole density) and n-type (dope for high electron density). It works differently than the two materials in a semiconductor material bond. The most important thing individually is that the current does not flow in one direction only. By joining the two materials together, the electron on the n-type side diffuses the p-type diffuse p-type p-p-type perforation. In the case of a carrier, please leave the opposite charge exposed to the diffuse duffel on the other side. A positive ion coa on the atomic site fixed to the crystalline lattice of the material. Sets the field across the side of the p side and the negative side joint.